Galaxy Century Microelectronics 2SB766
Silicon PNP Transistor
| Part No. | 2SB766 |
|---|---|
| Datasheet | 2SB766 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon PNP Transistor |
| Buy | Stock & Price |
FEATURES
● Large collector power dissipation PC.● Mini Power type package,allowing Pb Lead-free downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Production specification 2SB766 ORDERING INFORMATION Type No. Marking 2SB766 AQ/AR/AS SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base voltage -30 V VCEO Collector-Emitter voltage -25 V VEBO Emitter-Base voltage -5 V IC Collector current -1 A ICP Peak collector current -1.5 A PC Collector power dissipation 500 mW Tj,Tstg Junction and storage temperature -55 to+150 ℃ E047 Rev.A 1 Production specification Silicon PNP epitaxial planer transistor 2SB766
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-
