Datasheet4U Logo Datasheet4U.com

2SB834 - PNP Epitaxial Silicon Transistor

Key Features

  • z Low Collector-Emitter Saturation Voltage. VCE(sat)=1V(Max)@IC=3A,IB=0.3A. z DC Current Gain HFE=60-200@IC=0.5A. z Complememtary to PNP 2SD880. Pb Lead-free Production specification 2SB834 TO-220AB.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB834 Silicon PNP Transistor Toshiba
2SB834 Silicon PNP Power Transistors Inchange Semiconductor
2SB834 PNP Silicon Epitaxial Power Transistor Weitron Technology
2SB834 Silicon PNP Power Transistors Savantic
2SB834 HIGH VOLTAGE TRANSISTOR UTC

Other Datasheets by Galaxy Microelectronics

Part Number Description
2SB861 PNP Epitaxial Silicon Transistor
2SB1073 PNP Transistor
2SB1119 PNP Epitaxial Planar Silicon Transistors
2SB1132 PNP General Purpose Amplifier
2SB1184 Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PNP Epitaxial Silicon Transistor FEATURES z Low Collector-Emitter Saturation Voltage. VCE(sat)=1V(Max)@IC=3A,IB=0.3A. z DC Current Gain HFE=60-200@IC=0.5A. z Complememtary to PNP 2SD880. Pb Lead-free Production specification 2SB834 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Continuous Peak Collector Dissipation Junction and Storage Temperature -60 -7 -3 -6 -0.5 1.5 -55 to +150 V V A A W ℃ X031 Rev.A www.gmicroelec.