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2SC1815 - Silicon Epitaxial Planar Transistor

Key Features

  • High voltage and high current VCEO=50V(Min),IC=150mA(Max).
  • Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)).
  • Low noise.
  • Complementary to 2SA1015 2SC1815.

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Product Specification Silicon Epitaxial Planar Transistor FEATURES  High voltage and high current VCEO=50V(Min),IC=150mA(Max)  Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ))  Low noise  Complementary to 2SA1015 2SC1815 APPLICATIONS  Audio frequency general purpose amplifier applications. ORDERING INFORMATION Type No. Marking 2SC1815 HF SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 150 IB Base Current 50 PC Collector Dissipation 400 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mA mW ℃ STM0074A www.