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2SC2073 - NPN Triple Didduesd Planar Silicon Transistor

Key Features

  • z High Breakdown Voltage(VCBO≥900V). z Fast Switching Speed. z Wide ASO. Pb Lead-free TO-220AB.

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Production specification NPN Triple Didduesd Planar Silicon Transistor 2SC2073 FEATURES z High Breakdown Voltage(VCBO≥900V). z Fast Switching Speed. z Wide ASO. Pb Lead-free TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 900 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Pulse Base Crrent Collector Dissipation Junction and Storage Temperature Ta=25℃ Tc=25℃ 800 V 7V 1.5 A 5 0.8 A 2 W 40 -55 to +150 ℃ X033 Rev.A www.gmicroelec.com 1 Production specification NPN Triple Didduesd Planar Silicon Transistor 2SC2073 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.