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2SC3420 - NPN Transistor

Key Features

  • z High DC Current Gain: hFE=140~600(VCE=2V,IC=0.5A) Pb Lead-free hFE=70(Min. ) (VCE=2V,IC=4A) z Low Saturation Voltage:VCE(sat)=1.0V(Max. )(IC=4A,IB=0.1A) Production specification 2SC3420.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD FEATURES z High DC Current Gain: hFE=140~600(VCE=2V,IC=0.5A) Pb Lead-free hFE=70(Min.) (VCE=2V,IC=4A) z Low Saturation Voltage:VCE(sat)=1.0V(Max.)(IC=4A,IB=0.1A) Production specification 2SC3420 APPLICATIONS z STOROBO FLASH APPLICATION z MEDIUM POWER AMPLIFIER APPLICATIONS. SOT-89 ORDERING INFORMATION Type No. Marking 2SC3420 3420 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO IC Emitter-Base Voltage Collector Current DC Pulse IB Base Current PC Power Dissipation Tj Junction Temperature Tstg Storage Temperature Value 50 20 8 5 8 1 Units V V V A A 0.5 W 150 ℃ -55 to +150 ℃ E126 Rev.A www.gmicroelec.