Galaxy Century Microelectronics 2SC4272
NPN Epitaxial Planar Silicon Transistor
FEATURES
● Small size making it easy to provide high-density,small-sized hybrid IC′s. Pb Lead-free Production specification 2SC4272 ORDERING INFORMATION Type No. Marking 2SC4272 CH SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC ICP PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current(Pulse) Collector Dissipation Junction and Storage Temperature 75 45 5 1.0 1.5 1.3 -55 to +150 Units V V V A A W ℃ E054 Rev.A 1 Production specification NPN Epitaxial Planar Silicon Transistor 2SC4272ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO IC=10uA,IE=0 IC=1mA,IB=0 75 45 Emitter-base breakdown voltage V(BR)EBO IE=1