Galaxy Century Microelectronics 2SC4373
NPN Silicon Transistor
FEATURES
● High transition frequency:VCEO=120V.● High voltage:VCE(sat)=0.5V(Max). Pb Lead-free
● PC=1W(Mounted on ceramic substrate).
● Small flat package.
● Complementary: KTA1661. 2SC4373
APPLICATIONS
● Power amplifier application.● Power switching application. ORDERING INFORMATION Type No. Marking 2SC4373 CO/CY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 120 VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage 120 5 IC Collector Current -Continuous 800 IB Base current 160 PC Collector Dissipation 500 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mA mW ℃ E014 Rev.A 1 Production specification NPN Silicon Epitaxial Planar Transistor 2SC4373
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions