Galaxy Century Microelectronics 2SC4555
NPN Silicon Transistor
| Part No. | 2SC4555 |
|---|---|
| Datasheet | 2SC4555 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | NPN Silicon Transistor |
| Buy | Stock & Price |
FEATURES
z Complements the 2SA1745. Pb Lead-free Production specification 2SC4555APPLICATIONS
z Ideal for low-voltage operation. ORDERING INFORMATION Type No. Marking 2SC4555 UT SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 20 15 5 500 150 -55 to +150 Units V V V mA mW ℃ F094 Rev.A 1 Production specification NPN Silicon Epitaxial Planar Transistor 2SC4555ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 20 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 15 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 5 V Collector cut-off current ICBO VCB=15V,IE=0 0.1 μA Emitter cut-off current DC current gain IEBO hFE Collecto...
