Galaxy Century Microelectronics 2SC5344
Silicon Epitaxial Planar Transistor
FEATURES
z High hFE z Complementary pair with 2SA1981 Pb Lead-free Production specification 2SC5344APPLICATIONS
z General small signal amplifier ORDERING INFORMATION Type No. Marking 2SC5344 FAO/FAY SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 35 VCEO Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 800 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C023 Rev.A 1 Production specification Silicon Epitaxial Planar Transistor 2SC5344ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO IC=100μA,IE=0 IC=1mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=