Galaxy Century Microelectronics 2SD2142
Silicon NPN Transistor
| Part No. | 2SD2142 |
|---|---|
| Datasheet | 2SD2142 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
● Darlington connection for a high Hfe● High input impedance Pb
APPLICATIONS
● General purpose amplifiers. Production specification 2SD2142 ORDERING INFORMATION Type No. Marking 2SD2142 R1M SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 32 VEBO Emitter-Base Voltage 12 IC Collector Current -Continuous 300 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C249 Rev.A 1 Production specification Silicon Epitaxial Planar Transistor 2SD2142ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 - - V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 32 - - V Emitter-base breakdown vo
