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2SD2142 - Silicon NPN Transistor

Key Features

  • Darlington connection for a high Hfe.
  • High input impedance Pb.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Epitaxial Planar Transistor FEATURES  Darlington connection for a high Hfe  High input impedance Pb APPLICATIONS  General purpose amplifiers. Production specification 2SD2142 ORDERING INFORMATION Type No. Marking 2SD2142 R1M SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 32 VEBO Emitter-Base Voltage 12 IC Collector Current -Continuous 300 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C249 Rev.A www.gmesemi.