Galaxy Century Microelectronics 3CD14001
High Voltage Fast Switching PNP Power Transistor
FEATURES
● High speed switching.● Small flat package. Pb Lead-free
APPLICATIONS
● High voltage switch mode application. SOT-23 ORDERING INFORMATION Type No. Marking 3CD14001 14001 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature -400 V -400 V -7 V -0.2 A 350 mW -55 to +150 ℃ C197 Rev.A 1 Production specification High Voltage Fast Switching PNP Power Transistor 3CD14001ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)CBO V(BR)CEO V(BR)EBO IC=