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A42 - NPN Silicon Epitaxial Planar Transistor

Datasheet Summary

Features

  • Collector-Emitter voltage:VCEO=300V.
  • Collector current up to 500mA.
  • Complement to A92.
  • Small flat package.
  • Power dissipation:Pd(max)=500mW. Pb Lead-free A42.

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Datasheet Details

Part number A42
Manufacturer GME
File Size 188.26 KB
Description NPN Silicon Epitaxial Planar Transistor
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Production specification NPN Silicon Epitaxial Planar Transistor FEATURES  Collector-Emitter voltage:VCEO=300V.  Collector current up to 500mA.  Complement to A92.  Small flat package.  Power dissipation:Pd(max)=500mW. Pb Lead-free A42 APPLICATIONS  High voltage transistor. ORDERING INFORMATION Type No. Marking A42 A42 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO collector-base voltage 300 VCEO collector-emitter voltage 300 VEBO emitter-base voltage 5 IC collector current (DC) 0.5 PC Tj ,Tstg Collector dissipation junction and storage temperature 0.5 -55 to +150 UNIT V V V A W °C E022 Rev.A www.gmesemi.
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