Galaxy Century Microelectronics A44
NPN Silicon Epitaxial Planar Transistor
FEATURES
z Collector-Emitter voltage:VCEO=400V. z Collector current up to 300mA. z Complement to A94. z Power dissipation:Pd(max)=500mW. Pb Lead-free A44APPLICATIONS
z High voltage transistor. z Telephone switching. ORDERING INFORMATION Type No. Marking A44 A44 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO collector-base voltage 500 VCEO collector-emitter voltage 400 VEBO emitter-base voltage 6 IC collector current (DC) 0.3 PC RθJA Tj ,Tstg Collector dissipation Thermal resistance Junction-to-ambient junction and storage temperature 0.5 200 -55 to +150 UNIT V V V A W °C/W °C E015 Rev.A 1 Production specification NPN Silicon Epitaxial Planar Transistor A44ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN. MAX. UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 500 - V Collector-emitter breakdown voltage V(BR)CEO IC=1.0mA,IB=0 400 - V Emitter-base breakdown voltage V(...