Galaxy Century Microelectronics B772
PNP Silicon Transistor
| Part No. | B772 |
|---|---|
| Datasheet | B772 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | PNP Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Low speed switching.● Low saturation voltage.
● Excellent hFE linearity and high hFE.
● Complementary: D882. Pb Lead-free Production specification B772
APPLICATIONS
● Audio frequency power amplifier. TO-251 TO-252 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -30 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -3 PC Collector Dissipation 1.25 RθJA Thermal Resistance Junction to Ambient Air 100 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A W ℃/W ℃ V/(W)023 Rev.A 1 Production specification PNP Silicon Epitaxial Planar Transistor B772ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V Collector-emitter breakdown vol
