• Part: BAV170
  • Description: Low-leakage Double Diode
  • Category: Diode
  • Manufacturer: Galaxy Microelectronics
  • Size: 266.53 KB
Download BAV170 Datasheet PDF
Galaxy Microelectronics
BAV170
FEATURES - Plastic SMD package - Low leakage current: typ. 3p A - Switching time: typ. 0.8us - Continuous reverse voltage: max. 75V - Repetitive peak reverse voltage: max. 85V - Repetitive peak forward current: max. 500m A APPLICATIONS - Low-leakage current applications in surface mounted circuits SOT-23 ORDERING INFORMATION Type No. Marking Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Characteristic Symbol Repetitive Peak Reverse Voltage VRRM DC Reverse Voltage Forward Continuous Current single diode loaded double diode loaded IF repetitive peak forward current IFRM non-repetitive peak forward current square wave; Tj=25C prior to surge; tp=1μs tp=1ms IFSM tp=1s Power Dissipation Thermal Resistance Junction-to-Air - 1 RθJA Thermal Resistance Junction-to-Case - 1 RθJC Thermal Resistance Junction-to-Lead - 1 RθJL Operating Junction Temperature Range Storage Temperature Range TJ TSTG Note 1: The data tested by...