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BAV170 Datasheet

Manufacturer: Galaxy Microelectronics
BAV170 datasheet preview

Datasheet Details

Part number BAV170
Datasheet BAV170-GME.pdf
File Size 266.53 KB
Manufacturer Galaxy Microelectronics
Description Low-leakage Double Diode
BAV170 page 2 BAV170 page 3

BAV170 Overview

Product Specification Low-leakage Double Diode BAV170.

BAV170 Key Features

  • Plastic SMD package
  • Low leakage current: typ. 3pA
  • Switching time: typ. 0.8us
  • Continuous reverse voltage: max. 75V
  • Repetitive peak reverse voltage: max. 85V
  • Repetitive peak forward current: max. 500mA

BAV170 Applications

  • Low-leakage current applications in surface mounted circuits

BAV170 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
DIODES Logo BAV170 DUAL SURFACE MOUNT LOW LEAKAGE DIODE DIODES
NXP Logo BAV170 Low-leakage double diode NXP
Infineon Technologies AG Logo BAV170 Silicon Low Leakage Diode Array Infineon Technologies AG
TIPTEK Logo BAV170 SURFACE MOUNT SWITCHING DIODES TIPTEK
nexperia Logo BAV170 Low-leakage double diode nexperia
Galaxy Microelectronics logo - Manufacturer

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BAV170 Distributor

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