Galaxy Century Microelectronics BF822
NPN High-Voltage Transistors
| Part No. | BF822 |
|---|---|
| Datasheet | BF822 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | NPN High-Voltage Transistors |
| Buy | Stock & Price |
FEATURES
● Low current(max.50mA).● High voltage(max.300V).
● Complements:BF821,BF823. Pb Lead-free
APPLICATIONS
● Telephony and professional communication equipment. Production specification BF820/BF822 ORDERING INFORMATION Type No. Marking BF820 BF822 1V 1X SOT-23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage BF820 BF822 BF820 BF822 300 250 300 250 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 50 IB Base Collector-Peak 100 Ptot Total Power Dissipation 250 Tj,Tstg Junction and Storage Temperature -55 to +150 Unit V V V mA mA mW ℃ C107 Rev.A 1 Production specification NPN High-Voltage Transistors BF820/BF822ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=
