• Part: BL036N06-5DL8
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 973.58 KB
Download BL036N06-5DL8 Datasheet PDF
Galaxy Microelectronics
BL036N06-5DL8
Features - Super low gate charge - Green device available - Excellent cd V / dt effect decline - Advanced high cell density trench technology - JESD22-A114-B ESD rating of class 1C per human body model Mechanical Data - Case: PDFN5×6-8L - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN5×6-8L Ordering Information Part Number BL036N06-5DL8 Package PDFN5×6-8L Shipping Quantity 5000 pcs / Tape & Reel Marking Code 036N06 Maximum Ratings (@ TA = 25℃ unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TC = 100°C) Pulsed Drain Current Single Pulse Avalanche Energy - 3 Symbol VDSS VGSS IDM EAS Value 60 ±20 110 70 440 101 Unit V V A A A m J Thermal Characteristics Parameter Power Dissipation (TC = 25°C) Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Air - 1 Operating Junction...