• Part: BL03N10E
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 701.93 KB
Download BL03N10E Datasheet PDF
Galaxy Microelectronics
BL03N10E
Features - Electrostatic sensitive devices - Excellent package for good heat dissipation APPLICATIONS - Power switching application - Hard switching and high frequency circuits - Uninterruptible power supply Mechanical Data - Case: SOT-89 - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 SOT-89 Ordering Information Part Number BL03N10E Package SOT-89 Shipping Quantity 1000 pcs / Tape & Reel Marking Code 03N10 Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TA = 25°C) Continuous Drain Current (TA = 70°C) Pulsed Drain Current (tp = 10μs) Symbol VDSS VGSS ID ID IDM Value 100 ±20 3 2.3 20 Unit V V A A A Thermal Characteristics Parameter Power Dissipation - 1 Thermal Resistance Junction-to-Air - 1 Thermal Resistance Junction-to-Lead - 1 Thermal Resistance Junction-to-Case Operating Junction...