• Part: BL200P03-3DL8
  • Description: P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 544.49 KB
Download BL200P03-3DL8 Datasheet PDF
Galaxy Microelectronics
BL200P03-3DL8
Features - Advanced trench technology - Low on-resistance - Fast switching speed - HBM: JESD22-A114-B: 1A - Ro HS pliant with Halogen-free Mechanical Data - Case: PDFN3×3-8L - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN3×3-8L Ordering Information Part Number BL200P03-3DL8 Package PDFN3×3-8L Shipping Quantity 5000 pcs / Tape & Reel Marking Code 200P03 Maximum Ratings (@ TC = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TC = 100°C) Continuous Drain Current (TA = 25°C) - 1 Continuous Drain Current (TA = 100°C) - 1 Pulsed Drain Current (tp =10μs, TC = 25°C) Single Pulse Avalanche Energy - 3 Power Dissipation (TC = 25°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDSS VGSS IDM EAS PD TJ TSTG Value -30 ±20 -40 -25 -6.7 -4.2 -160 45 45 -55 ~ +150 -55 ~...