• Part: BL2N100
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 714.12 KB
Download BL2N100 Datasheet PDF
Galaxy Microelectronics
BL2N100
Features - Low gate charge minimize switching loss - Fast recovery body diode Mechanical Data - Case: TO-220AB - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 TO-220AB Ordering Information Part Number BL2N100 Package TO-220AB Shipping Quantity 50 pcs / Tube Maximum Ratings (@ TC = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current Pulsed Drain Current (VGS = 10V) Single Pulse Avalanche Energy - 1 Symbol VDSS VGSS ID IDM EAS Thermal Characteristics Parameter Power Dissipation (TC = 25°C) Thermal Resistance Junction-to-Air Thermal Resistance Junction-to-Case Operating Junction Temperature Range Storage Temperature Range Symbol PD RθJA RθJC TJ TSTG Marking Code 2N100 Value 1000 ±30 2 8 24 Unit V V A A m J Value 70 62.5 1.79 -55 ~ +150 -55 ~ +150 Unit W °C/W °C/W °C °C MTM0913A: December 2022 [1.1] .gmesemi. N-Channe...