BL3401 - P-Channel High Density Trench MOSDET

Galaxy Microelectronics

Key Features

z Super high dense cell trench design for low RDS(ON). z Rugged and Reliable. Pb Lead-free.

BL3401 p-channel high density trench mosdet by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	BL3401
Manufacturer	Galaxy Microelectronics
File Size	287.72 KB
Description	P-Channel High Density Trench MOSDET
Datasheet	BL3401 Datasheet

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Full PDF Text Transcription (Reference)

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P-Channel High Density Trench MOSDET FEATURES z Super high dense cell trench design for low RDS(ON). z Rugged and Reliable. Pb Lead-free APPLICATIONS z P-channel enhancement mode effect transistor. z Switching application. Production specification BL3401 ORDERING INFORMATION Type No. Marking BL3401 A19TF SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM IS Gate -Source voltage Drain Current-Continuous a -Pulseb @ TA = 25 ℃ Drain-Source Diode Forward Current a PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient TJ, Tstg Junction and Storage Temperature Value -25 ±12 -4.2 -16 -2.2 1.25 75 -55 to +150 Units V V A A W ℃/W ℃ C194 Rev.A www.gmicroelec.