Datasheet4U Logo Datasheet4U.com

BL3401 - P-Channel High Density Trench MOSDET

Datasheet Summary

Features

  • z Super high dense cell trench design for low RDS(ON). z Rugged and Reliable. Pb Lead-free.

📥 Download Datasheet

Datasheet preview – BL3401

Datasheet Details

Part number BL3401
Manufacturer GME
File Size 287.72 KB
Description P-Channel High Density Trench MOSDET
Datasheet download datasheet BL3401 Datasheet
Additional preview pages of the BL3401 datasheet.

📁 Similar Datasheet

  • BL34018 - high quality hands free speakerphone system (SHANGHAI BELLING)
  • BL3406B - 800mA Synchronous Buck Converter (SHANGHAI BELLING)
  • BL34118 - Voice Switched Speakerphone (SHANGHAI BELLING)
  • BL34119 - Telephone low voltage audio amplifier circuit (SHANGHAI BELLING)
  • BL3085A - RS-485 Transceivers (BELLING)
  • BL3085B - RS-485 Transceivers (BELLING)
  • BL3085E - High-speed transceiver (BELLING)
  • BL3090 - RS-485/RS-422 Transceivers (BELLING)
  • BL3102 - COMS Clock Generator/Driver (SHANGHAI BELLING)
  • BL317 - HIGH CURRENT ADJUSTABLE VOLTAGE REGULATOR (BELLING)
Other Datasheets by GME
  • BL3401L - P-Channel MOSDET
  • BL3400 - N-Channel Power Mosfet
  • BL3402 - N-Channel Power Mosfet
  • BL3404 - N-Channel Power Mosfet
  • BL3407 - P-Channel Power Mosfet
  • BL3415 - Dual P-Channel Power Mosfet
  • BL3428W - N-Channel Enhancement Mode MOSFET
  • BL3435 - P-Channel Power Mosfet

Full PDF Text Transcription

Click to expand full text
P-Channel High Density Trench MOSDET FEATURES z Super high dense cell trench design for low RDS(ON). z Rugged and Reliable. Pb Lead-free APPLICATIONS z P-channel enhancement mode effect transistor. z Switching application. Production specification BL3401 ORDERING INFORMATION Type No. Marking BL3401 A19TF SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM IS Gate -Source voltage Drain Current-Continuous a -Pulseb @ TA = 25 ℃ Drain-Source Diode Forward Current a PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient TJ, Tstg Junction and Storage Temperature Value -25 ±12 -4.2 -16 -2.2 1.25 75 -55 to +150 Units V V A A W ℃/W ℃ C194 Rev.A www.gmicroelec.
Published: |