Galaxy Century Microelectronics BL3401
P-Channel High Density Trench MOSDET
| Part No. | BL3401 |
|---|---|
| Datasheet | BL3401 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | P-Channel High Density Trench MOSDET |
| Buy | Stock & Price |
FEATURES
z Super high dense cell trench design for low RDS(ON). z Rugged and Reliable. Pb Lead-freeAPPLICATIONS
z P-channel enhancement mode effect transistor. z Switching application. Production specification BL3401 ORDERING INFORMATION Type No. Marking BL3401 A19TF SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM IS Gate -Source voltage Drain Current-Continuous a -Pulseb @ TA = 25 ℃ Drain-Source Diode Forward Current a PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient TJ, Tstg Junction and Storage Temperature Value -25 ±12 -4.2 -16 -2.2 1.25 75 -55 to +150 Units V V A A W ℃/W ℃ C194 Rev.A 1 Production specification P-Channel High Density Trench MOSDET BL3401ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-body Leakage ON CHARACTERISTICSb...
