BL3401 Datasheet | Galaxy Microelectronics

P-Channel High Density Trench MOSDET Features z Super high dense cell trench design for low RDS(ON). z Rugged and Reliable. Pb Lead-free APPLICATIONS z P-channel enhancement mode effect transistor. z Switching application. Production specification ORDERING INFORMATION Type No. Marking A19TF SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM Gate -Source voltage Drain Current-Continuous a -Pulseb @ TA = 25 ℃ Drain-Source Diode Forward Current a PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient TJ, Tstg Junction and Storage Temperature Value -25 ±12 -4.2...