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BL3401L - P-Channel MOSDET

Key Features

  • Super high dense cell trench design for low RDS(ON).
  • Rugged and Reliable.
  • Electrostatic Sensitive Devices. Pb Lead-free.

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BL3401 P-Channel High Density Trench MOSDET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel High Density Trench MOSDET FEATURES  Super high dense cell trench design for low RDS(ON).  Rugged and Reliable.  Electrostatic Sensitive Devices. Pb Lead-free APPLICATIONS  P-channel enhancement mode effect transistor.  Switching application. Production specification BL3401 ORDERING INFORMATION Type No. Marking BL3401 3401 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM IS Gate -Source voltage Drain Current-Continuous a -Pulseb @ TA = 25 ℃ Drain-Source Diode Forward Current a PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient TJ, Tstg Junction and Storage Temperature Value -30 ±12 -4.2 -16 -2.2 1.25 75 -55 to +150 Units V V A A W ℃/W ℃ C194 Rev.