Galaxy Century Microelectronics BL3401L
P-Channel MOSDET
| Part No. | BL3401L |
|---|---|
| Datasheet | BL3401L Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | P-Channel MOSDET |
| Buy | Stock & Price |
FEATURES
● Super high dense cell trench design for low RDS(ON).● Rugged and Reliable.
● Electrostatic Sensitive Devices. Pb Lead-free
APPLICATIONS
● P-channel enhancement mode effect transistor.● Switching application. Production specification BL3401 ORDERING INFORMATION Type No. Marking BL3401 3401 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM IS Gate -Source voltage Drain Current-Continuous a -Pulseb @ TA = 25 ℃ Drain-Source Diode Forward Current a PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient TJ, Tstg Junction and Storage Temperature Value -30 ±12 -4.2 -16 -2.2 1.25 75 -55 to +150 Units V V A A W ℃/W ℃ C194 Rev.A 1 Production specification P-Channel High Density Trench MOSDET BL3401
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test con
