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BL3415 - Dual P-Channel Power Mosfet

Datasheet Summary

Features

  • Electrostatic Sensitive Devices.
  • VDS (V) = -20V.
  • ID =-4 A.
  • RDS(ON) < 50mΩ (VGS = -4.5V) RDS(ON) < 70mΩ (VGS = -2.5V) RDS(ON) < 100mΩ (VGS = -1.8V) Pb Lead-free.

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Datasheet preview – BL3415

Datasheet Details

Part number BL3415
Manufacturer GME
File Size 401.93 KB
Description Dual P-Channel Power Mosfet
Datasheet download datasheet BL3415 Datasheet
Additional preview pages of the BL3415 datasheet.

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Full PDF Text Transcription

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Production specification Dual P-Channel Enhancement Mode Field Effect Transistor BL3415 FEATURES  Electrostatic Sensitive Devices.  VDS (V) = -20V  ID =-4 A  RDS(ON) < 50mΩ (VGS = -4.5V) RDS(ON) < 70mΩ (VGS = -2.5V) RDS(ON) < 100mΩ (VGS = -1.8V) Pb Lead-free APPLICATIONS  P-channel enhancement mode effect transistor.  Switching application. ORDERING INFORMATION Type No. Marking BL3415 3415 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS VGSS ID IDM Drain-Source voltage Gate -Source voltage Continuous Drain CurrentA Pulsed Drain Current a @ TA = 25 ℃ @ TA = 70 ℃ PD Power Dissipation @ TA = 25 ℃ @ TA = 70 ℃ RθJA Thermal resistance,Junction-to-Ambient TJ, Tstg Junction and Storage Temperature Value -20 ±8 -4.0 -3.
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