BL350N04-3DL8 Datasheet | Galaxy Microelectronics

Features - Advanced trench technology - Low gate charge - Excellent RDS(ON) N-Channel Enhancement Mode MOSFET BL350N04-3DL8 Applications - PWM - Load switch Mechanical Data - Case: PDFN3×3-8L - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN3×3-8L Ordering Information Part Number BL350N04-3DL8 Package PDFN3×3-8L Shipping Quantity 5000 pcs / Tape & Reel Marking Code 350N04 Maximum Ratings (@ TC = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TC = 100°C) Continuous Drain Current (TA = 25°C) - 1 Continuous Drain Current (TA = 100°C) - 1 Pulsed Drain Current (tp = 10μs, TC = 25°C) Single Pulse Avalanche Energy - 3 Power Dissipation (TC = 25°C) Power Dissipation (TA = 25°C) - 1 Operating Junction Temperature Range Storage Temperature Range Symbol VDSS VGSS IDM EAS PD TJ...