Datasheet4U Logo Datasheet4U.com

BL350N04-3DL8 - N-Channel Enhancement Mode MOSFET

Features

  • Advanced trench technology.
  • Low gate charge.
  • Excellent RDS(ON) N-Channel Enhancement Mode MOSFET BL350N04-3DL8.

📥 Download Datasheet

📁 Similar Datasheet

  • BL3501 - Universal infrared remote controller (SHANGHAI BELLING)
  • BL3502S - 8 MASK single chip (SHANGHAI BELLING)
  • BL358H - 1MHZ High Voltage Opamp (BELLING)
  • BL358L - 1MHZ Rail-to-Rail IO Operational Amplifier (BELLING)
  • BL35P02 - 8-Bit OTP MCU (SHANGHAI BELLING)
  • BL35P02R - 8-Bit OTP MCU (SHANGHAI BELLING)
  • BL35P12 - 8 OTP microcontroller (SHANGHAI BELLING)
  • BL3085A - RS-485 Transceivers (BELLING)
  • BL3085B - RS-485 Transceivers (BELLING)
  • BL3085E - High-speed transceiver (BELLING)
Other Datasheets by GME
  • BL3400 - N-Channel Power Mosfet
  • BL3401 - P-Channel High Density Trench MOSDET
  • BL3401L - P-Channel MOSDET
  • BL3402 - N-Channel Power Mosfet
  • BL3404 - N-Channel Power Mosfet
  • BL3407 - P-Channel Power Mosfet
  • BL3415 - P-Channel Enhancement Mode MOSFET
  • BL3415-3L - P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
Features  Advanced trench technology  Low gate charge  Excellent RDS(ON) N-Channel Enhancement Mode MOSFET BL350N04-3DL8 Applications  PWM  Load switch Mechanical Data  Case: PDFN3×3-8L  Molding Compound: UL Flammability Classification Rating 94V-0  Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN3×3-8L Ordering Information Part Number BL350N04-3DL8 Package PDFN3×3-8L Shipping Quantity 5000 pcs / Tape & Reel Marking Code 350N04 Maximum Ratings (@ TC = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TC = 100°C) Continuous Drain Current (TA = 25°C) *1 Continuous Drain Current (TA = 100°C) *1 Pulsed Drain Current (tp = 10μs, TC = 25°C) Si
Published: |