• Part: BL900P06D
  • Description: P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 661.74 KB
Download BL900P06D Datasheet PDF
Galaxy Microelectronics
BL900P06D
Features - Super low gate charge - Excellent Cd V/dt effect decline - Advanced high cell density Trench technology - JESD22-A114-B ESD rating of class 1C per human body model Mechanical Data - Case: TO-252 - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 TO-252 Ordering Information Part Number BL900P06D Package TO-252 Shipping Quantity 80 pcs / Tube or 2500 pcs / Tape & Reel Marking Code 900P06D Maximum Ratings (@ TC = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TC = 100°C) Continuous Drain Current (TA = 25°C) - 1 Continuous Drain Current (TA = 100°C) - 1 Pulsed Drain Current (tp = 10μs, TC = 25°C) Single Pulse Avalanche Energy - 3 Power Dissipation (TC = 25°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDSS VGSS IDM EAS PD TJ TSTG Value -60 ±20 -18...