• Part: BSS127
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 540.72 KB
Download BSS127 Datasheet PDF
Galaxy Microelectronics
BSS127
Features - Advanced trench technology - Low input capacitance - High VDSS rating for power application - Low input / output leakage - Ro HS pliant with Halogen-free Mechanical Data - Case: SOT-23 - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matted-Tin plated; Solderable Per MIL-STD-202, Method 208 SOT-23 Ordering Information Part Number BSS127 Package SOT-23 Shipping Quantity 3000 pcs / Tape & Reel Marking Code K29 Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TA = 25°C) - 1 Continuous Drain Current (TA = 70°C) - 1 Pulsed Drain Current (tp =10μs, TA = 25°C) Power Dissipation (TA = 25°C) - 1 Power Dissipation (TA = 25°C) - 2 Operating Junction Temperature Range Storage Temperature Range Symbol VDSS VGSS ID IDM PD TJ TSTG Value 600 ±20 60 48 240 1.25 0.61 -55 ~ +150 -55 ~ +150 Unit V V m A m A m A W W °C °C Thermal Characteristics Parameter Thermal Resistance...