Galaxy Century Microelectronics DAN222M
Switching diode
| Part No. | DAN222M |
|---|---|
| Datasheet | DAN222M Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Switching diode |
| Buy | Stock & Price |
FEATURES
z Ultra High speed switching.APPLICATIONS
z Ultra small mold type. z High reliability. Pb Lead-free Production specification DAN222M ORDERING INFORMATION Type No. Marking DAN222M N SOT-723 Package Code SOT-723 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Non-Repetitive Peak reverse voltage VRM 80 Diode reverse voltage VR 80 Forward continuous Current（peak） IF 300 Average forward current IO 100 Surge current （t=1us） Isurge 4 Power Dissipation Pd 150 Junction temperature Tj 150 Storage temperature range Tstg -55 to +150 Unit V V mA mA A mW ℃ ℃ N001 Rev.A 1 Production specification Switching diode DAN222MELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time Symbol V(BR)R IR VF CD trr Test conditions IR= 0.1μA VR=70V IF=100mA VR
