Galaxy Century Microelectronics GBS4M
Silicon Bridge Rectifiers
| Part No. | GBS4M |
|---|---|
| Datasheet | GBS4M Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon Bridge Rectifiers |
| Buy | Stock & Price |
FEATURES
z Rating to 1000V PRV z Surge overload rating to 120 Amperes peak z Reliable low cost construction utilizing molded plastic technique results in inexpensive product z Lead solderable per MIL-STD-202 method 208 GBS4A--GBS4M Pb Lead-freeMAXIMUM RATINGS
(@TA = 25°C unless otherwise specified) Characteristic GBS GBS Symbol 4A 4B Maximum recurrent peak reverse voltage VRRM 50 100 GBS 4D 200 GBS 4G 400 GBS 4J 600 GBS 4K 800 GBS 4M 1000 UNITS V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V 50Hz sine wave, R-load Without heat sink Ta=25℃ 50Hz sine wave, R-load With heat sink Tc=50℃ IF(AV) 1.5 4.0 A Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load IFSM 120 A Thermal Characteristics Characteristic Operating junction temperature range Storage temperature range Symbol TJ TSTG Value - 55 ---- + 150 - 5
