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GESD3V3B2L

Manufacturer: Galaxy Microelectronics

GESD3V3B2L datasheet by Galaxy Microelectronics.

GESD3V3B2L datasheet preview

GESD3V3B2L Datasheet Details

Part number GESD3V3B2L
Datasheet GESD3V3B2L-GME.pdf
File Size 449.60 KB
Manufacturer Galaxy Microelectronics
Description Bi-directional TVS Diode
GESD3V3B2L page 2 GESD3V3B2L page 3

GESD3V3B2L Overview

Bi-directional TVS Diode GESD3V3B2L.

GESD3V3B2L Key Features

  • ESD / transient protection of high speed data lines
  • IEC 61000-4-2 (ESD): ±30 kV (air), ±30 kV (contact)
  • Working voltage: VRWM = 3.3V
  • Low leakage current
  • Low clamping voltage
  • Case: DFN1006-2
  • Molding pound: UL Flammability Classification Rating 94V-0
  • Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

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