• Part: GESD3V3B2L
  • Description: Bi-directional TVS Diode
  • Category: Diode
  • Manufacturer: Galaxy Microelectronics
  • Size: 449.60 KB
Download GESD3V3B2L Datasheet PDF
Galaxy Microelectronics
GESD3V3B2L
Features - ESD / transient protection of high speed data lines - IEC 61000-4-2 (ESD): ±30 k V (air), ±30 k V (contact) - Working voltage: VRWM = 3.3V - Low leakage current - Low clamping voltage Mechanical Data - Case: DFN1006-2 - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 DFN1006-2 Ordering Information Part Number Package DFN1006-2 Shipping Quantity 10000 pcs / Tape & Reel Marking Code Maximum Ratings (@ TA = 25℃ unless otherwise specified) Parameter IEC 61000-4-2; ESD (Air) IEC 61000-4-2; ESD (Contact) Peak Pulse Power (tp = 8/20μs) Peak Pulse Current (tp = 8/20μs) Symbol VESD-A VESD-C PPP IPP Value ±30 ±30 70 Unit k V k V W A Thermal Characteristics Parameter Power Dissipation Thermal Resistance Junction-to-Air Thermal Resistance Junction-to-Lead Thermal Resistance Junction-to-Case Junction Temperature Range Storage Temperature Range Symbol PD RθJA RθJL RθJC TJ...