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GKD07N65

Manufacturer: Galaxy Microelectronics

GKD07N65 datasheet by Galaxy Microelectronics.

GKD07N65 datasheet preview

GKD07N65 Datasheet Details

Part number GKD07N65
Datasheet GKD07N65-GME.pdf
File Size 581.41 KB
Manufacturer Galaxy Microelectronics
Description Trench FS IGBT
GKD07N65 page 2 GKD07N65 page 3

GKD07N65 Overview

Trench FS IGBT With Full Rated Diode GKD07N65.

GKD07N65 Key Features

  • High breakdown voltage to 650V for improved reliability
  • Trench-stop technology offering
  • High speed switching
  • High ruggedness, temperature stable behavior
  • Short circuit withstand time: 10μs
  • Low VCE(SAT)
  • Easy parallel switching capability due to positive temperature coefficient
  • Enhanced avalanche capability
  • RoHS pliant with Halogen-free

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