• Part: GKD07N65
  • Description: Trench FS IGBT
  • Manufacturer: Galaxy Microelectronics
  • Size: 581.41 KB
Download GKD07N65 Datasheet PDF
Galaxy Microelectronics
GKD07N65
Features - High breakdown voltage to 650V for improved reliability - Trench-stop technology offering: - High speed switching - High ruggedness, temperature stable behavior - Short circuit withstand time: 10μs - Low VCE(SAT) - Easy parallel switching capability due to positive temperature coefficient in VCE(SAT) - Enhanced avalanche capability - Ro HS pliant with Halogen-free Applications - Uninterruptible power supplies - Solar inverter Mechanical Data - Case: TO-252 - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 TO-252 Ordering Information Part Number GKD07N65 Package TO-252 Shipping Quantity 80 pcs / Tube & 2500 pcs / Tape & Reel Marking Code KD07N65 Maximum Ratings (@ TC = 25°C unless otherwise specified) Parameter Collector-to-Emitter Voltage Gate-Emitter Voltage DC Collector Current (TC = 25°C, limited by maximum TJ) DC Collector Current (TC = 100°C, limited by maximum TJ) Diode...