GKD07N65 Description
Trench FS IGBT With Full Rated Diode GKD07N65.
GKD07N65 Key Features
- High breakdown voltage to 650V for improved reliability
- Trench-stop technology offering
- High speed switching
- High ruggedness, temperature stable behavior
- Short circuit withstand time: 10μs
- Low VCE(SAT)
- Easy parallel switching capability due to positive temperature coefficient
- Enhanced avalanche capability
- RoHS pliant with Halogen-free