Galaxy Century Microelectronics GSC120R030B7
Silicon Carbide N-Channel Power MOSFET
| Part No. | GSC120R030B7 |
|---|---|
| Datasheet | GSC120R030B7 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon Carbide N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Silicon Carbide N-Channel Power MOSFET GSC120R030B7● High blocking voltage with low on-resistance
● High-speed switching with low capacitances
● Low switching loss
● Sense pin for optimized switching performance
● RoHS compliant with Halogen-free
APPLICATIONS
● Solar inverters● Charger
● Uninterruptible Power Supply
● Switch Mode Power Supplies
MECHANICAL DATA
● Case: TO-263-7● Molding Compound: UL Flammability Classification Rating 94V-0
● Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 TO-263-7 Ordering Information Part Number GSC120R030B7 Package TO-263-7 Shipping Quantity 1000 pcs / Tape & Reel Marking Code GSC120R030B7
MAXIMUM RATINGS
(@ TC = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage (transient) Gate-to-Source Voltage (static) Continuous Drain Current (TC = 25°C) Continuous Drain Current (TC = 100°C) Pulsed Drain Current (tp =10μs, TC = 25°C) Single Pulse Avalanche Energy *2 Power Dissipation...
