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GSC2D0465F Datasheet

Manufacturer: Galaxy Microelectronics
GSC2D0465F datasheet preview

Datasheet Details

Part number GSC2D0465F
Datasheet GSC2D0465F-GME.pdf
File Size 395.77 KB
Manufacturer Galaxy Microelectronics
Description SiC Schottky Barrier Diode
GSC2D0465F page 2 GSC2D0465F page 3

GSC2D0465F Overview

Features  Extremely low reverse current  No reverse recovery current  Temperature independent switching  Positive temperature coefficient on VF  Excellent surge current capability  Low capacitive charge SiC Schottky Barrier Diode GSC2D0465F Key performance parameters Type VDC IF @ 150°C QC@400V TJ GSC2D0465F 650V 4A 13nC 175°C Applications  Switch mode power supplies (SMPS)  Uninterruptible power supplies ...

GSC2D0465F Key Features

  • Extremely low reverse current
  • No reverse recovery current
  • Temperature independent switching
  • Positive temperature coefficient on VF
  • Excellent surge current capability
  • Low capacitive charge
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