• Part: GSC2D0465F
  • Description: SiC Schottky Barrier Diode
  • Category: Diode
  • Manufacturer: Galaxy Microelectronics
  • Size: 395.77 KB
Download GSC2D0465F Datasheet PDF
Galaxy Microelectronics
GSC2D0465F
GSC2D0465F is SiC Schottky Barrier Diode manufactured by Galaxy Microelectronics.
Features - Extremely low reverse current - No reverse recovery current - Temperature independent switching - Positive temperature coefficient on VF - Excellent surge current capability - Low capacitive charge Si C Schottky Barrier Diode GSC2D0465F Key performance parameters Type VDC IF @ 150°C QC@400V TJ GSC2D0465F 650V 4A 13n C 175°C Applications - Switch mode power supplies (SMPS) - Uninterruptible power supplies - Motor drivers - Power factor correction Mechanical Data - Case: ITO-220AC - Molding pound: UL flammability classification rating 94V-0 - Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 ITO-220AC Ordering Information Part Number GSC2D0465F Package ITO-220AC Shipping Quantity 50 pcs / Tube Marking Code GSC2D0465F Maximum Ratings (@ TJ = 25°C unless otherwise specified) Parameter Peak Repetitive Reverse Voltage DC Blocking Voltage Continuous Forward Current (TC = 25°C) Continuous Forward Current (TC = 125°C) Continuous Forward Current (TC = 150°C) Peak Forward Surge Current (10ms single half sine-wave, TC =...