GSC2D0465F Datasheet SiC Schottky Barrier Diode

Manufacturer: Galaxy Microelectronics

GSC2D0465F sic schottky barrier diode by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	GSC2D0465F
Manufacturer	Galaxy Microelectronics
File Size	395.77 KB
Description	SiC Schottky Barrier Diode
Download	GSC2D0465F Download (PDF)

Key Features

Extremely low reverse current.
No reverse recovery current.
Temperature independent switching.
Positive temperature coefficient on VF.
Excellent surge current capability.
Low capacitive charge SiC Schottky Barrier Diode GSC2D0465F Key performance parameters Type VDC IF @ 150°C QC@400V TJ GSC2D0465F 650V 4A 13nC 175°C.

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