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GSC2D0465F - SiC Schottky Barrier Diode

Features

  • Extremely low reverse current.
  • No reverse recovery current.
  • Temperature independent switching.
  • Positive temperature coefficient on VF.
  • Excellent surge current capability.
  • Low capacitive charge SiC Schottky Barrier Diode GSC2D0465F Key performance parameters Type VDC IF @ 150°C QC@400V TJ GSC2D0465F 650V 4A 13nC 175°C.

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    Features  Extremely low reverse current  No reverse recovery current  Temperature independent switching  Positive temperature coefficient on VF  Excellent surge current capability  Low capacitive charge SiC Schottky Barrier Diode GSC2D0465F Key performance parameters Type VDC IF @ 150°C QC@400V TJ GSC2D0465F 650V 4A 13nC 175°C Applications  Switch mode power supplies (SMPS)  Uninterruptible power supplies  Motor drivers  Power factor correction Mechanical Data  Case: ITO-220AC  Molding compound: UL flammability classification rating 94V-0  Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 ITO-220AC Ordering Information Part Number GSC2D0465F Package ITO-220AC Shipping Quantity 50 pcs / Tube Marking Code GSC2D0465F Maximum Ratings (@ TJ = 25°C unless
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