GSC2D0465F
GSC2D0465F is SiC Schottky Barrier Diode manufactured by Galaxy Microelectronics.
Features
- Extremely low reverse current
- No reverse recovery current
- Temperature independent switching
- Positive temperature coefficient on VF
- Excellent surge current capability
- Low capacitive charge
Si C Schottky Barrier Diode GSC2D0465F
Key performance parameters
Type VDC IF @ 150°C QC@400V TJ
GSC2D0465F 650V 4A 13n C 175°C
Applications
- Switch mode power supplies (SMPS)
- Uninterruptible power supplies
- Motor drivers
- Power factor correction
Mechanical Data
- Case: ITO-220AC
- Molding pound: UL flammability classification rating
94V-0
- Terminals: Tin-plated; solderability per MIL-STD-202,
Method 208
ITO-220AC
Ordering Information
Part Number GSC2D0465F
Package ITO-220AC
Shipping Quantity 50 pcs / Tube
Marking Code GSC2D0465F
Maximum Ratings (@ TJ = 25°C unless otherwise specified)
Parameter Peak Repetitive Reverse Voltage DC Blocking Voltage Continuous Forward Current (TC = 25°C) Continuous Forward Current (TC = 125°C) Continuous Forward Current (TC = 150°C) Peak Forward Surge Current (10ms single half sine-wave, TC =...