Datasheet4U Logo Datasheet4U.com

HM879 - SILICON PNP EPITAXIAL TYPE TRANSISTOR

Key Features

  • Charger-up time is about 1 mS faster Than of a germanium transistor. Pb Lead-free.
  • Small saturation voltage can bring dissipation And flasing times. HM879.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Hi-Sincerity Mocroelectronics
HM879 NPN Transistor JCST
HM8002D mono class AB audio power amplifier H&M Semiconductor
HM803 Low-Power Microprocessor Power Monitoring and Reset Circuit H&M Semiconductor
HM809 Low-Power Microprocessor Power Monitoring and Reset Circuit H&M Semiconductor

Other Datasheets by Galaxy Microelectronics

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Production specification SILICON PNP EPITAXIAL TYPE TRANSISTOR FEATURES  Charger-up time is about 1 mS faster Than of a germanium transistor. Pb Lead-free  Small saturation voltage can bring dissipation And flasing times. HM879 ORDERING INFORMATION Type No. Marking HM879 879 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 30 VCEX Collector-Emitter Voltage 20 VCEO Collector-Emitter Voltage 10 VEBO Emitter-Base Voltage 6 IC PC Tj,Tstg Collector Current –Continuous –Pluse Collector Dissipation Junction and Storage Temperature 3 5 1 -55 to +150 Units V V V V A W ℃ E079 Rev.A www.gmesemi.