Galaxy Century Microelectronics HM879
SILICON PNP EPITAXIAL TYPE TRANSISTOR
| Part No. | HM879 |
|---|---|
| Datasheet | HM879 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | SILICON PNP EPITAXIAL TYPE TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● Charger-up time is about 1 mS faster Than of a germanium transistor. Pb Lead-free● Small saturation voltage can bring dissipation And flasing times. HM879 ORDERING INFORMATION Type No. Marking HM879 879 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 30 VCEX Collector-Emitter Voltage 20 VCEO Collector-Emitter Voltage 10 VEBO Emitter-Base Voltage 6 IC PC Tj,Tstg Collector Current –Continuous –Pluse Collector Dissipation Junction and Storage Temperature 3 5 1 -55 to +150 Units V V V V A W ℃ E079 Rev.A 1 Production specification SILICON PNP EPITAXIAL TYPE TRANSISTOR HM879
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakd
