Galaxy Century Microelectronics IMX8
Dual NPN Silicon Epitaxial Planar Transistor
FEATURES
● Epitaxial planar die construction● Complementary PNP type available (IMT4) Mechanic al Data
● Case: SOT-23-6L
● Molding compound: UL flammability classification rating 94V-0
● Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 SOT-23-6L Ordering Information Part Number IMX8 Package SOT-23-6L Shipping Quantity 3000 pcs / Tape & Reel Marking Code KX8
MAXIMUM RATINGS
(@ TA = 25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current (Continuous) Symbol VCBO VCEO VEBO IC Value 120 120 5 0.05 Unit V V V A Thermal Characteristics Parameter Symbol Power Dissipation *1 PD Thermal Resistance Junction-to-Air *1 RθJA Junction Temperature TJ Storage Temperature Range TSTG Note 1: Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. Value 0.3 417 -55 ~ +150 -55 ~ +150 Unit W °C/W °C °C STM0567A: October 2022 [2.0] 1 Dual NPN Silicon Epitaxial Planar Transistor IMX8ELECTRICAL CHARACTERISTICS
(@ TA = 25°C unless otherwise specified) Parameter Symbol Test Condition Min.