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KTC3265 - NPN Silicon Epitaxial Planar Transistor

Key Features

  • High DC current gain: hFE:100-320.
  • Low saturation voltage. Pb Lead-free.
  • Suitable for driver stage of small motor.
  • Complementary to KTA1298.
  • Small package. KTC3265.

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Production specification NPN Silicon Epitaxial Planar Transistor FEATURES  High DC current gain: hFE:100-320.  Low saturation voltage. Pb Lead-free  Suitable for driver stage of small motor.  Complementary to KTA1298.  Small package. KTC3265 APPLICATIONS  Low frequency power amplifier application.  Power switching application. ORDERING INFORMATION Type No. Marking KTC3265 EO/EY SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 35 VCEO Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 800 IB Base Current 160 PC Collector Power Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mA mW ℃ C109 Rev.