KTC3879 - NPN Silicon Epitaxial Planar Transistor

Galaxy Microelectronics

Key Features

z High power gain. Pb Lead-free.

KTC3879 npn silicon epitaxial planar transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	KTC3879
Manufacturer	Galaxy Microelectronics
File Size	180.50 KB
Description	NPN Silicon Epitaxial Planar Transistor
Datasheet	KTC3879 Datasheet

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NPN Silicon Epitaxial Planar Transistor FEATURES z High power gain. Pb Lead-free APPLICATIONS z High frequency application. z HF,VHF band amplifier appilication. Production specification KTC3879 ORDERING INFORMATION Type No. Marking KTC3879 RR/RO/RY SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 35 VCEO Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 4 IC Collector Current 50 IE Emitter Current -50 PC Collector Power Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mA mW ℃ C110 Rev.A www.gmicroelec.