Galaxy Century Microelectronics KTC4076
NPN Silicon Epitaxial Planar Transistor
| Part No. | KTC4076 |
|---|---|
| Datasheet | KTC4076 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | NPN Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
● Excellent HFE Linearity.● Complementary to KTA2015
● Power dissipation.(PC=100mW) Pb Lead-free
APPLICATIONS
● General purpose and switching application. Production specification KTC4076 ORDERING INFORMATION Type No. Marking KTC4076 WO/WY SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 35 VCEO Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 500 PC Collector Dissipation 100 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F049 Rev.A 1 Production specification NPN Silicon Epitaxial Planar Transistor KTC4076ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR
