Galaxy Century Microelectronics M28S
NPN Silicon Epitaxial Planar Transistor
| Part No. | M28S |
|---|---|
| Datasheet | M28S Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | NPN Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
z Excellent HFE Linearity. z High DC current gain. z High Power Dissipation.APPLICATIONS
z Audio output driver amplifier. z General purpose switch. Pb Lead-free ORDERING INFORMATION Type No. Marking M28S 28S Production specification M28S SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 20 VEBO Emitter-Base Voltage 6 IC Collector Current -Continuous 1 IB Base current 0.4 PC Collector Power Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A A mW ℃ C058 Rev.A 1 Production specification NPN Silicon Epitaxial Planar Transistor M28SELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown
