M28S - NPN Silicon Epitaxial Planar Transistor

Galaxy Microelectronics

Key Features

z Excellent HFE Linearity. z High DC current gain. z High Power Dissipation.

M28S npn silicon epitaxial planar transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	M28S
Manufacturer	Galaxy Microelectronics
File Size	142.97 KB
Description	NPN Silicon Epitaxial Planar Transistor
Datasheet	M28S Datasheet

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NPN Silicon Epitaxial Planar Transistor FEATURES z Excellent HFE Linearity. z High DC current gain. z High Power Dissipation. APPLICATIONS z Audio output driver amplifier. z General purpose switch. Pb Lead-free ORDERING INFORMATION Type No. Marking M28S 28S Production specification M28S SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 20 VEBO Emitter-Base Voltage 6 IC Collector Current -Continuous 1 IB Base current 0.4 PC Collector Power Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A A mW ℃ C058 Rev.A www.gmicroelec.