M8050 - Silicon Epitaxial Planar Transistor

Galaxy Microelectronics

Key Features

High Collector Current. (IC= 800mA).
Complementary To M8550. Pb Lead-free.
Excellent HFE Linearity.
High total power dissipation. (PC=200mW). M8050.

M8050 silicon epitaxial planar transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	M8050
Manufacturer	Galaxy Microelectronics
File Size	220.18 KB
Description	Silicon Epitaxial Planar Transistor
Datasheet	M8050 Datasheet

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Production specification Silicon Epitaxial Planar Transistor FEATURES  High Collector Current.(IC= 800mA).  Complementary To M8550. Pb Lead-free  Excellent HFE Linearity.  High total power dissipation.(PC=200mW). M8050 APPLICATIONS  High Collector Current.. ORDERING INFORMATION Type No. Marking M8050 Y11 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 25 Units V V VEBO Emitter-Base Voltage 6V IC PC Tj,Tstg Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 800 mA 200 mW -55 to +150 ℃ C152 Rev.A www.gmesemi.