Galaxy Century Microelectronics M8550
Silicon Epitaxial Planar Transistor
| Part No. | M8550 |
|---|---|
| Datasheet | M8550 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
● High Collector Current.(IC= -800 mA).● Complementary To M8050.
● Excellent HFE Linearity. Pb Lead-free
APPLICATIONS
● High Collector Current. Production specification M8550 ORDERING INFORMATION Type No. Marking M8550 Y21 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -25 VEBO Emitter-Base Voltage -6 IC Collector Current -Continuous -800 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C153 Rev.A 1 Production specification Silicon Epitaxial Planar Transistor M8550ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA,IB=0 -25 V
