MBR2580CT Datasheet | Galaxy Microelectronics

FEATURES z High Surge Capacity. Pb z For Use In Low Voltage,High Frequency Inverters, Lead-free Free Wheeling and Polarity Protection Applications. z Metal Silicon Junction,Majority Carrier Conduction. z High Current Capacity,Low Forward Voltage Drop. z Guard Ring for Over Voltage Protection. TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified MBR MBR MBR MBR MBR MBR MBR Symbol Parameter 2530 2535 2540 2545 2550 2560 2580 CT CT CT CT CT CT CT VRRM Repetitive Peak Reverse Voltage 30 35 40 45 50 60 80 MBR 25100 CT Unit V VRMS RMS Voltage 21 25 28 32 35 42 56 70 V VDC DC Blocking Voltage 30 35 40 45 50 60 80 100 V IF(AV) IFSM RθJC Tj Tstg Average Forward Rectified Current @TA=100℃ Peak Forward Surge Current 8.3ms Single Half Sine-wave superimposed on rated load Thermal Resistance (Note1) Operating Junction and Storage Temperature Range 25 150 1.5...