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MBRB20150CT - Schottky Barrier Rectifier

Key Features

  • z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use in Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protection.

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Other Datasheets by Galaxy Microelectronics

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MBRB20200CT Schottky Barrier Rectifier
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production specification Schottky Barrier Rectifier MBRB20150CT--MBRB20200CT FEATURES z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use in Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protection Applications. TO-263 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter MBRB20150CT MBRB20200CT Unit VRRM Recurrent Peak Reverse Voltage 150 200 V VRMS VDC I(AV) IFSM RθJC Tj Tstg RMS Reverse Voltage DC Blocking Voltage Average Forward Total Device Rectified Current @TA=100℃ Peak Forward Surge Current 8.