Galaxy Century Microelectronics MBRB20200CT
Schottky Barrier Rectifier
FEATURES
z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use in Low Voltage,High Frequency Inverters Free Wheeling,and Polarity ProtectionAPPLICATIONS
. TO-263 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter MBRB20150CT MBRB20200CT Unit VRRM Recurrent Peak Reverse Voltage 150 200 V VRMS VDC I(AV) IFSM RθJC Tj Tstg RMS Reverse Voltage DC Blocking Voltage Average Forward Total Device Rectified Current @TA=100℃ Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimosed on Rated Load Typical Thermal Resistance Junction to Case (Note 1) Operating Junction and StorageTem-perature Range 105 140 150 200 20 150 1.5 -55 to +150 V V A A ℃/W ℃ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Revers