MBRD10150 Datasheet | Galaxy Microelectronics

FEATURES z High surge capacity. z For use in low voltage,high frequency Pb Lead-free inverters free wheeling,and polarity protection applications. z Metal silicon junction,majority carrier conduction. z High current capacity,low forward voltage drop. z Guard ring for over voltage protection. TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter MBRD10150 MBRD10200 Unit VRRM Rcurrent Peak Reverse Voltage VRMS RMS Voltage VDC DC Blocking Voltage IF(AV) Average Forward Rectified Current @TA=100℃ IFSM RθJC Tj Tstg Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimosed on Rated Load Typical Thermal Resistance (Note1) Operating Junction and Storage Temperature Range Note:1.Thermal resistance junction to case. 150 200 105 140 150 200 10 150 2.2 -55 to +150 V V V A A ℃/W ℃ ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise...