Galaxy Century Microelectronics MBRD830
Dual Schottky Rectifiers
| Part No. | MBRD830 |
|---|---|
| Datasheet | MBRD830 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Dual Schottky Rectifiers |
| Buy | Stock & Price |
FEATURES
z High surge capacity. z For use in low voltage,high frequency Pb Lead-free inverters free wheeling,and polarity protection applications. z Metal silicon junction,majority carrier conduction. z High current capacity,low forward voltage drop. z Guard ring for over voltage protection. TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter MBRD 830 MBRD 835 MBRD 840 MBRD 845 MBRD 850 MBRD 860 MBRD 880 MBRD 8100 Unit VRRM Rcurrent Peak Reverse Voltage 30 35 40 45 50 60 80 100 V VRMS RMS Voltage 21 25 28 32 35 42 56 70 V DC Blocking VDC Voltage 30 35 40 45 50 60 80 100 V Average Forward IF(AV) Rectified Current @TA=100℃ 8.0 A Peak Forward Surge Current 8.3ms Single IFSM Half Sine-wave Superimosed on 150 A Rated Load RθJC Typical Thermal Resistance(Note1) 3.0 ℃/W Tj Tstg Operating Junction and Storage Temperature Range -55 to +150 ℃ Note:1.Thermal resistance junction to case. W082 Rev.A 1 Production specification Dual Schottky Rectifier...
