MBRXF1200 Datasheet | Galaxy Microelectronics

Features - Metal silicon junction, majority carrier conduction - High surge capability - High temperature soldering guaranteed: 260°C/10 seconds - High current capability, low forward voltage drop - Guarding for over voltage protection - Ro HS pliant Mechanical Data - Case: SOD-123F molded plastic - Molding pound, UL flammability classification rating 94V-0 - Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 - Polarity: Color band denotes cathode end Maximum Ratings (@TA = 25°C unless otherwise specified) Characteristic Symbol MBRXF1150 Peak repetitive reverse voltage V RRM RMS reverse voltage V RMS DC blocking voltage VDC 150 Maximum average forward output current I F(AV) Peak forward surge current, 8.3ms single half-sine-wave I FSM Thermal Characteristics Parameter Symbol MBRXF1150 Ty...