MMBT2222 Datasheet | Galaxy Microelectronics

FEATURES z Epitaxial planar die construction. z Ultra-small surface mount package. Pb Lead-free Production specification APPLICATIONS z Use as a medium power amplifier. z Switching requiring collector currents up to 500m A. ORDERING INFORMATION Type No. Marking M1B SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC RθJA Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Thermal resistance Junction to ambient 60 30 5 600 300 417 Tj,Tstg Junction and Storage Temperature -55 to +150 Unit V V V m A m W ℃/W ℃ C091 Rev.A .gmicroelec. 1 Production specification NPN General Purpose Amplifier ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA...