Galaxy Century Microelectronics MMBT4401
NPN Silicon Epitaxial Planar Transistor
FEATURES
● Epitaxial planar die construction.● Complementary PNP type available: Pb Lead-free MMBT4403.
● Ideal for medium power amplification and switching.
● MSL 1
APPLICATIONS
● General purpose application, switching application. MMBT4401 SOT-23 ORDERING INFORMATION Type No. Marking MMBT4401 2X Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 40 VEBO Emitter-Base Voltage 6 IC Collector Current -Continuous 600 PC Collector Power Dissipation 350 RθJA Thermal Resistance,Junction to Ambient 357 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃/W ℃ C073 Rev.A 1 Production specification NPN Silicon Epitaxial Planar Transistor MMBT4401ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Tes