Galaxy Century Microelectronics MMBT4403
PNP General Purpose Transistor
FEATURES
z Epitaxial planar die construction. z Complementary NPN type available Pb Lead-free (MMBT4401). z Also available in lead free version. z Ideal for medium power amplification and switching. z MSL 1APPLICATIONS
z Ideal for medium power amplification and switching. Production specification MMBT4403 SOT-23 ORDERING INFORMATION Type No. Marking MMBT4403 2T Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO collector-base voltage -40 VCEO collector-emitter voltage -40 VEBO emitter-base voltage -5 IC collector current (DC) -0.6 PC Collector dissipation 0.35 RθJA Tj ,Tstg Thermal Resistance,Junction to Ambient junction and storage temperature 357 -55 to +150 UNIT V V V A W ℃/W °C C074 Rev.A 1 Production specification PNP General Purpose Transistor MMBT4403ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Symbol Parameter Test