Galaxy Century Microelectronics MMBTA93
PNP High Voltage Amplifier
FEATURES
● Epitaxial planar die construction.● Complementary NPN type available Pb Lead-free (MMBTA42).
● Ideal for medium power amplification and switching. MMBTA93
APPLICATIONS
● High voltage driver applications. ORDERING INFORMATION Type No. Marking MMBTA93 YW SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO collector-base voltage -200 UNIT V VCEO collector-emitter voltage -200 V VEBO emitter-base voltage -5 V IC collector current (DC) -0.5 A PC Collector dissipation 0.35 W Tj ,Tstg junction and storage temperature -55 to +150 °C C338 Rev.A 1 PNP High Voltage Amplifier Production specification MMBTA93ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Symbol Parameter Test conditions MIN. MAX. UNIT V(BR)CBO Collector-base breakdown voltage IC=-100μA,IE=0 -200 V(BR)CEO Collector-emitter br